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www.irf.com 1 12/06/04 IRFU3709PBF smps mosfet hexfet power mosfet v dss r ds(on) max i d 30v 9.0m ? 90a notes through are on page 9 absolute maximum ratings symbol parameter max. units v ds drain-source voltage 30 v v gs gate-to-source voltage 20 v i d @ t c = 25c continuous drain current, v gs @ 10v 90 i d @ t c = 100c continuous drain current, v gs @ 10v 57 a i dm pulsed drain current 360 p d @t c = 25c maximum power dissipation 120 w p d @t c = 100c maximum power dissipation 48 w linear derating factor 0.96 mw/c t j , t stg junction and storage temperature range -55 to + 150 c parameter typ. max. units r jc junction-to-case CCC 1.04 r ja junction-to-ambient CCC 110 c/w thermal resistance applications benefits ultra-low gate impedance very low rds(on) at 4.5v v gs fully characterized avalanche voltage and current high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use high frequency buck converters for computer processor power lead-free i-pakirfu3709 pd - 95519a downloaded from: http:///

2 www.irf.com symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) CCC CCC p-n junction diode. CCC 0.88 1.3 v t j = 25c, i s = 30a, v gs = 0v CCC 0.82 CCC t j = 125c, i s = 30a, v gs = 0v t rr reverse recovery time CCC 48 72 ns t j = 25c, i f = 30a, v r =15v q rr reverse recovery charge CCC 46 69 nc di/dt = 100a/s t rr reverse recovery time CCC 48 72 ns t j = 125c, i f = 30a, v r =15v q rr reverse recovery charge CCC 52 78 nc di/dt = 100a/s dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy CCC 382 mj i ar avalanche current CCC 30 a avalanche characteristics s d g diode characteristics 90 360 symbol parameter min. typ. max. units conditions g fs forward transconductance 53 CCC CCC s v ds = 15v, i d = 30a q g total gate charge CCC 27 41 i d = 15a q gs gate-to-source charge CCC 6.7 CCC nc v ds = 15v q gd gate-to-drain ("miller") charge CCC 9.7 CCC v gs = 4.5v q oss output gate charge CCC 22 CCC v gs = 0v, v ds = 10v t d(on) turn-on delay time CCC 11 CCC v dd = 15v t r rise time CCC 171 CCC i d = 30a t d(off) turn-off delay time CCC 21 CCC r g = 1.8 ? t f fall time CCC 9.2 CCC v gs = 4.5v c iss input capacitance CCC 2672 CCC v gs = 0v c oss output capacitance CCC 1064 CCC pf v ds = 16v c rss reverse transfer capacitance CCC 109 CCC ? = 1.0mhz v sd diode forward voltage parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.029 CCC v/c reference to 25c, i d = 1ma CCC 6.9 9.0 v gs = 10v, i d = 15a CCC 7.9 10.5 v gs = 4.5v, i d = 12a v gs(th) gate threshold voltage 1.0 CCC 3.0 v v ds = v gs , i d = 250a CCC CCC 20 a v ds = 24v, v gs = 0v CCC CCC 100 v ds = 24v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 200 v gs = 16v gate-to-source reverse leakage CCC CCC -200 na v gs = -16v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m ? downloaded from: http:///

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 16 0 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 90a 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v downloaded from: http:///

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 5 10 15 20 25 30 0 1 2 3 4 5 6 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 30a v = 6v ds v = 15v ds v = 24v ds 0.1 1 10 100 1000 0.2 0.8 1.4 2.0 2. 6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 10000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 0 1000 2000 3000 4000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss downloaded from: http:///

www.irf.com 5 fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 20 40 60 80 100 t , case temperature ( c) i , drain current (a) c d limited by package downloaded from: http:///

6 www.irf.com q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 13a 19a 30a downloaded from: http:///

www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets

? ? ? ! "" ? # $ $ ? %& ? ' ( ? %) $ downloaded from: http:///

8 www.irf.com

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www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/04 repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.85mh r g = 25 ? , i as = 30a. pulse width 400s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a.
as s e mb l y example: with assembly this is an irfu120 ye ar 9 = 199 9 dat e code line a week 19 in the assembly line "a" as s e mb le d on ww 19, 1999 lot code 5678 part number 56 irf u120 int e r nat ional logo rectif ier lot code 919a 78 note: "p" in as s embly line pos ition indicates "l ead-f ree" 56 78 as s e mb l y lot code rect if ier logo int ernational irf u120 part number we e k 19 dat e code ye ar 9 = 1999 a = as s e mb l y s i t e code p = designates lead-free product (opt ional) downloaded from: http:///

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